Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-2gb-1x-sr-fm HMA41GR7BJR4N-UH Capacity 8GB (1x 8GB)

HMA41GR7BJR4N-UH Capacity 8GB (1x 8GB) Brand Hynix Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

CT16G4DFD8266 Capacity 16GB (1x 16GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1

2xHMA41GR7BJR4N-UH Capacity 16GB (2x 8GB) Brand Hynix Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

2xHMT125U6TFR8C-H9 Capacity 4GB (2x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

and don't be surprised if you can actually upgrade your Mac with double the amount of RAM that was originally specified by Apple

Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-2gb-1x-sr-fm HMA41GR7BJR4N-UH Capacity 8GB (1x 8GB)Product Overview This 1GB (1x 1GB) DDR3 1333 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.