Pay in 4 interest-free payments of $10.75 Learn more
Ships within 48 hours · Estimated delivery Aug 10 - Aug 15
M393B5170FH0-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration x8 Pieces in Kit 1
5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Single rank Configuration x4 Pieces in Kit 2 Compatibility
This 4GB (1x 4GB) DDR2 800 MT/s Dual rank
5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility
Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1600-udimm-4gb-1x-sr-fm M393B5170FH0-CH9 Capacity 4GB (1x 4GB)Product Overview This 4GB (1x 4GB) DDR3L 1600 MT s RAM module from Hynix is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
US$ 69.00
US$ 114.50
US$ 112.50
US$ 897.50
US$ 1397.50
US$ 1397.50
US$ 997.50
US$ 1197.50
US$ 1197.50
US$ 997.50
US$ 897.50
US$ 897.50
US$ 180.00
US$ 1197.50
US$ 1097.50
US$ 1397.50
