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5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 16-chip 256M x8 Pieces in Kit 1 Compatibility
M470L2923BN0-CB3 Capacity 1GB (1x 1GB) Brand Samsung Speed DDR-333 - 333MT/s - PC2700 Voltage 2
HMT41GS6BFR8A-PB Capacity 8GB (1x 8GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
2xHMA82GU6MFR8N-TF Capacity 32GB (2x 16GB) Brand Hynix Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
MT36JSZF51272PZ-1G4F1 Capacity 4GB (1x 4GB) Brand Micron Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
Micron 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V ECC Registered 288-pin RDIMM RAM Module Classification_ram-ddr4-2133-udimm-8gb-1x-dr 5V Technology DDR3 Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR4 2666 MT s 288 pin RDIMM RAM module from Micron . This RAM module is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL19, and is designed
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