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5V Technology DDR Error Correction ECC Signal Processing Registered Form Factor 184-pin RDIMM Ranks Dual rank CAS Latency CL3 Configuration x4 Pieces in Kit 1 Compatibility
CT8G4DFS824A Capacity 8GB (1x 8GB) Brand Crucial Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 288-pin EUDIMM Ranks Dual rank Configuration 18 Chip 512M x8 Pieces in Kit 1 Compatibility
this means you can upgrade to Elpida brand memory without voiding your system’s original warranty
M471B5173DB0-YK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
Hynix 2GB (1x 2GB) DDR3-1066 PC3-8500 1.5V DR x8 204-pin SODIMM RAM Module Classification_ram-ddr2-800-eudimm-2gb-1x-dr 5V Technology DDR Error CorrectionProduct Overview This 2GB (1x 2GB) DDR3 1066 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1066 MT s with an overall transfer rate of PC3 8500. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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