Samsung 2GB (1x 2GB) CL7 DDR3-1066 PC3-8500 1.5V 240-pin UDIMM RAM Module Capacity_4GB 2V Technology DDR4 Error Correction

2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration x4 Pieces in Kit 1

HYS72D256220GBR-5-B Capacity 2GB (1x 2GB) Brand Infineon Speed DDR-400 - 400MT/s - PC3200 Voltage 2

x4 configuration RAM kit is for use in DDR3L compatible systems and operates at 1866 MT/s with an overall transfer rate of PC3L-14900

5V Technology DDR3 Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Dual rank Configuration 16 Chip 512M x8 Pieces in Kit 2 Compatibility

2xCDG Capacity 4GB (2x 2GB) Brand Hynix Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1

Samsung 2GB (1x 2GB) CL7 DDR3-1066 PC3-8500 1.5V 240-pin UDIMM RAM Module Capacity_4GB 2V Technology DDR4 Error CorrectionProduct Overview This 2GB (1x 2GB) DDR3 1066 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1066 MT s with an overall transfer rate of PC3 8500. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL7, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.