Samsung 4GB (1x 4GB) CL7 DDR3L-1066 PC3L-8500 1.35V / 1.5V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1600-udimm-8gb-1x-dr CT2K2G3S1067M Capacity 4GB (2x 2GB)

CT2K2G3S1067M Capacity 4GB (2x 2GB) Brand Crucial Speed DDR3L-1066 -1066MT/s - 1067MT/s - PC3L-8500 Voltage 1

HMT125U6TFR8C-H9N0 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

This 8GB (1x 8GB) DDR3 1333 MT/s Dual rank

By purchasing servers or workstations with minimal preinstalled components and then installing Kingston server memory

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Pieces in Kit 1 Compatibility

Samsung 4GB (1x 4GB) CL7 DDR3L-1066 PC3L-8500 1.35V / 1.5V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1600-udimm-8gb-1x-dr CT2K2G3S1067M Capacity 4GB (2x 2GB)Product Overview This 4GB (1x 4GB) DDR3L 1066 MT s RAM module from Samsung is for use in DDR3L compatible systems and operates at 1066 MT s with an overall transfer rate of PC3L 8500. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL7, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.