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Hynix 2GB (1x 2GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin SODIMM RAM Module Signal Processing_Unbuffered Dramatically improve performance and handle

SKU 75657658762
4.5
USD38.99 USD75.99

Pay in 4 interest-free payments of $9.75 Learn more

Shipping Estimate
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Ships within 48 hours · Estimated delivery Aug 10 - Aug 15

Description

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 2GB (1x 2GB) DDR2 800 MT/s 240-pin EUDIMM RAM module from Hynix

5 Configuration x8 Pieces in Kit 2 Compatibility

M378A2K43CB1-CRC Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

M395T5160QZ4-CE66 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1

2V Technology DDR4 Error Correction ECC Signal Processing Load Reduced Form Factor 288-pin LRDIMM Ranks Quad rank CAS Latency CL17 Configuration x4 Pieces in Kit 1 Compatibility

Hynix 2GB (1x 2GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin SODIMM RAM Module Signal Processing_Unbuffered Dramatically improve performance and handleProduct Overview This 2GB (1x 2GB) DDR3 1333 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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